New from International Rectifier is the IRF6718 DirectFET MOSFET, a 25 V device offering low on-state resistance and optimised for DC switch applications such as active ORing, hot swap and electronic fuse (E-fuse).
The device features IR’s latest generation silicon technology in a new large can DirectFET package to deliver RDS(ON) of only 0,5 mΩ at 10 V VGS in a 60% smaller footprint and 85% lower profile than a D2PAK. It provides an improved safe operating area (SOA) capability for E-fuse and hot swap circuits, and is offered lead-free and RoHS compliant.
The IRF6718 is an expansion of IR’s 25 V DirectFET family targeting DC switch applications. The IRF6717 medium can and IRF6713 small can DirectFETs also target DC switch applications and provide low RDS(ON) for their respective PCB footprints.
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