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Schottky barrier diodes
20 January 2010, Power Electronics / Power Management

ON Semiconductor has introduced four new 30 V Schottky barrier diodes. Housed in an 0201 dual silicon no-lead (DSN2) chip-level package, the new diodes are available with low forward voltage or low reverse current at forward current ratings of either 100 mA or 200 mA.

The Schottky diodes feature solderable metal contacts under the package that enable 100% utilisation of the package area for active silicon. The new 0201 DSN-2 package – which measures a mere 0,6 x 0,3 x 0,3 mm – provides three times the board space savings compared to the popular SOD-923 (also known as 0402). Providing low leakage currents, the new devices help designers address power losses, efficiency and switching speeds.

The NSR0xF30NXT5G series devices are optimised for low forward voltage drop (Vf) – 370 mV – at 10 mA. The NSR0xL30NXT5G series devices are designed for low reverse current (Ir) – 0,2 μA – at 10 V reverse voltage and offer very low leakage. With ESD ratings of Human Body Model: Class 3B and Machine Model: Class C, coupled with low thermal resistance, the diodes are RoHS compliant and have an operating temperature range of –40°C to +125°C.

For more information contact Marian Ledgerwood, Future Electronics, +27 (0)21 421 8292, marian.ledgerwood@futureelectronics.com, www.futureelectronics.com


Credit(s)
Supplied By: Future Electronics
Tel: +27 21 421 8292
Fax: 086 623 4522
Email: craig.hemmes@futureelectronics.com
www: www.futureelectronics.com
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