IGBTs integrate SiC diode
20 January 2010
Power Electronics / Power Management
IXYS has expanded its family of 600 V GenX3 IGBTs to include a portfolio of parts with silicon carbide (SiC) co-pack diodes. For demanding applications like solar inverters and switch mode power supplies, the combination of the GenX3 IGBT and the extremely fast SiC diode create a solution that can allow the customer a solution in markets where efficiency is the main design requirement.
The GenX3 platform is manufactured using IXYS’ robust HDMOS IGBT process and is optimised in two speed classes. The B3 range is optimised for 20 kHz hard switching applications and the SiC diode combination is beneficial for efficiency critical applications at mid-range frequencies, such as solar inverters. The C3 range extends the range to higher frequencies.
The square reverse bias safe operating area (RBSOA) featured in the 600 V GenX3 IGBT improves maximum clamped inductive load current, allowing the device to safely operate in snubberless, hard switching applications. Products are offered in various standard packages (TO-220 to TO-247) with collector current ratings from 30 A to 60 A. They will also be offered in IXYS’ ISOPLUS packaging providing enhanced thermal performance.
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