Power Electronics / Power Management


Ultrafast medium current MOSFET/IGBT driver

9 May 2001 Power Electronics / Power Management

Ixys has introduced the IXDD404, a new CMOS high-speed dual MOSFET/IGBT Driver IC. It has two identical drivers that can each deliver 4 A peak into a highly capacitive load. This makes it suited for medium current, discrete MOSFETs and IGBTs.

This driver chip can simplify design of driver circuits for MOSFETs/IGBTs in push-pull, half-bridge and full bridge topologies, says the company.

The driver IC features tri-state outputs. With the ENABLE pin high, the output voltage swings in response to the signal. Once the ENABLE pin goes low, the output goes into a high impedance state. This allows an auxiliary circuit to slowly turn-off the MOSFET or IGBT to protect it from LxdI/dt generated voltage transients. This problem is particularly severe for many design engineers working with high voltage circuits that use MOSFETs or high speed IGBTs, because there is little voltage guardband between the high bus voltage and device voltage ratings. The device has improved speed and drive capabilities - low rise and fall times in the order of 25 ns, which are matched. It operates over a very wide supply voltage range of 4,5 to 25 V. It can be driven by either TTL or CMOS input signals.

Each driver is fully immune to latch-up within the range of 0 to 4 A output current and switching frequencies up to a few megahertz are possible. The very low propagation delay time and a low output impedance make it extremely useful for driving medium current MOSFETs or medium current fast IGBTs. It is available in the standard 8-pin P-DIP.

Avnet Kopp, (011) 444 2333

[email protected]

www.avnet.co.za





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