Lowest on-resistance RAD-hard P-channel MOSFETs

9 May 2001 Power Electronics / Power Management

New 30, 60, 100 and 200 V P-channel R5 RAD-Hard MOSFETs from International Rectifier have an average of 24% lower device on-resistance and 81% lower gate charge than similar products in the radiation-hardened MOSFET market. Lower device on-resistance equates to a reduction in conduction loss, boosting circuit and system efficiency. Lower gate charge reduces drive power requirements, simplifies drive circuitry and reduces component count, system weight and design cycle time.

With superior radiation hardness and single event effect (SEE) immunity, the R5 MOSFETs are well suited for systems that must survive penetrating gamma rays and neutron fluence from nuclear detonation.

Applications include radiation-sensitive military avionics and missiles, commercial communication satellites, scientific and surveillance satellites, etc.

The devices come in three die sizes and eight package styles. Packaging includes industry-standard hermetic-leaded (through-hole) and space-saving surface mount, including the tabless configurations.

Avnet Kopp

(011) 444 2333

[email protected]

www.avnet.co.za

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