A power MOSFET in a package with double-sided cooling has been released by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6,1 milliohms at a 10 V gate drive. The n-channel device is targeted at industrial-type power supplies, motor control circuits, AC/DC power supplies for servers and routers, and systems using point-of-load (POL) power conversion. It can also be used as a primary side
switch or for secondary side rectification in higher voltage intermediate bus conversion (IBC) designs.
In addition to the low conduction losses provided by its TrenchFET silicon, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature. The PolarPAK’s leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout as other PolarPAK devices with a drain-source voltage rating under 150 V, thus simplifying PCB design. The SiE876DF is also 100% Rg- and UIS-tested.
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