Vishay recently unveiled the first TrenchFET power MOSFET built on a new low-on-resistance technology optimised for higher-voltage devices. The new ThunderFET SiR880DP is an 80 V power MOSFET with an on-resistance rating at a 4,5 V gate drive. Packaged in the thermally enhanced PowerPAK SO-8, the new 80 V device offers on-resistances of 8,5 mΩ at 4,5 V, 6,7 mΩ at 7,5 V and 5,9 mΩ at 10 V. Typical on-resistance times gate charge is 161 at 4,5 V.
The SiR880DP is optimised for primary side switching in isolated DC-to-DC converters for telecom point-of-load applications. Its low on-resistance translates into reduced power consumption and greener solutions, especially at light loads such as standby mode. The device’s 4,5 V rating is conducive to higher-frequency designs, enabling lower gate drive losses in POL applications while allowing lower-voltage/lower-cost 5 V PWM ICs to be utilised.
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