Power Electronics / Power Management


N- and P-channel MOSFETs

13 October 2010 Power Electronics / Power Management

Central Semiconductor’s new CEDM7001 (N-channel) and CEDM8001 (P-channel) are 20 V, 100 mA MOSFETs packaged in the miniature, low-profile SOT-883L surface mount case. These devices have a rated continuous drain current of 100 mA and a peak drain current of 200 mA (tp < 10 μs). Both devices have a low minimum gate threshold voltage of 0,6 V and


RDS(ON) of 3,0 Ω (CEDM7001) and 8,0 Ω (CEDM8001). The devices are targeted at design engineers seeking energy efficient MOSFETs in a tiny package.

The SOT-883L package uses a board area of only 0,6 mm³ and has a maximum profile of 0,4 mm. Designed to suit space constrained circuit layouts, these MOSFETs are suitable for the latest portable electronic products such as cellular phones, MP3 players, Bluetooth headsets, glucose blood analysers and hearing aids. Applications include DC to DC conversion, load switching, battery charging and boost switching.



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