ST unveils new power MOSFET package

10 November 2010 Power Electronics / Power Management

STMicroelectronics has increased the power density achievable with its latest generation MDmesh V power MOSFET technology by introducing an advanced high-performance power package.

The new 1 mm high surface-mount package houses the industry-standard TO-220 die size within a leadless outline measuring only 8 x 8 mm and features an exposed metal drain pad for efficient removal of internally generated heat.

The new package’s compact form factor and high thermal performance, combined with the low RDS(ON) per die area of ST’s MDmesh V technology, maximise power density and reliability to save PCB space.

ST will add MOSFETs in the PowerFLAT 8x8 HV to its existing MDmesh V portfolio, and recently announced the first of these: the 650 V STL21N65M5, featuring RDS(ON) of 0,190 Ω, maximum rated current of 17 A and junction-to-case thermal resistance of 1,0°C/W.

For more information contact Robin Scholes, Avnet Kopp, +27 (0)11 809 6100, robin.scholes@avnet.co.za, www.avnet.co.za

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