IGBTs in new power packages
10 November 2010
Power Electronics / Power Management
IXYS has successfully integrated its GenX3 IGBT product line with its new proprietary power package called the ‘SMPD’ (prefix MM). The MMIX1G320N60B3 combines the low conduction and switching loss attributes of IXYS’ GenX3 B3-class IGBT product line with the high current handling and electrical isolation capabilities of its new compact, high-performance SMPD power package.
These devices are tailored to provide excellent thermal performance and temperature cycling capabilities in high-current applications that utilise power semiconductor devices that require heatsink grounding techniques to maintain optimal system performance. The broad range of applications include power inverters, UPS, motor drives and motor control, SMPS, PFC, UPS, battery chargers, welding machines and higher power lighting controls.
Initially available in the B3 speed classification, the MMIX1G320N60B3 features a balance between conduction and total switching energy losses and is optimised for medium-speed hard-switching frequencies from 5 kHz to 40 kHz. The square reverse bias safe operating area (RBSOA) feature of this device enhances device ruggedness by ensuring safe operation in snubberless, hard switching applications.
IXYS’ new SMPD power package incorporates a direct copper bond (DCB) ceramic isolator which provides 2500 Vrms electrical isolation between die and heatsink. Due to the matched thermal expansion coefficients of silicon and DCB ceramic, mechanical stress to the die and solder caused by power and temperature cycling is reduced, thus improving the reliability of the device. With a low package profile (5,3 mm height x 24,8 mm length x 32,3 mm width), the SMPD power package features nearly one-fourth the weight and one-third the volume of conventional isolated high-power packages such as SOT-227.
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