Vishay has broadened its optoelectronics portfolio with the introduction of the new AEC-Q101-qualified VEMD25x0X01 high-speed silicon PIN photodiodes and VEMT25x0X01 NPN planar phototransistors. Available in 1,8 mm gullwing and reverse gullwing surface-mount packages, the photodetectors are sensitive to visible and near-infrared radiation and offer a compact footprint of 2,3 by 2,3 by 2,8 mm. The new devices are optimised for light curtains, miniature switches, encoders and photo-interrupters in metering, automotive and printer applications; and detectors for visible and infrared emitter sources in proximity applications.
The photodiodes offer a 12 μA light current and spectral sensitivity range of 350 nm to 1120 nm, while the phototransistors offer a light current of 6 mA and spectral sensitivity range of 470 nm to 1090 nm. The VEMD25x0X01 and VEMT25x0X01 devices feature a 1 nA dark current, ±15° angle of half sensitivity and temperature range of -40°C to +100°C, and have a matching IR emitter in the high-intensity, high-speed VSMB20x0X01.
While most photodetectors only feature a moisture sensitivity level (MSL) of 3 and must be mounted within 72 hours of being unsealed or removed from protective packing, the VEMD25x0X01 and VEMT25x0X01 devices can remain on the plant floor for up to four weeks, thanks to their MSL of 2a, per J-STD-020. The photo detectors support lead-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, are halogen-free according to the IEC 61249-2-21 definition, and are compatible with lead-free reflow solder assembly.
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