NXP challenges RF designers
19 January 2011
News
RF power transistors have traditionally been used in telecommunications, aerospace and broadcast infrastructure, as well as various industrial, scientific and medical applications. As RF LDMOS technology has become more powerful, rugged and cost-effective, this has in turn enabled exciting new applications such as RF-driven lamps. The NXP HPRF design challenge will award prizes to design entries based on criteria including creativity, design efficiency, usefulness, originality and proof of concept. Prizes worth $25 000 include an all-expenses-paid trip to the 2011 MTT-S International Microwave Symposium in Baltimore, Maryland, US.
The design challenge will take place in three phases:
* Phase I: Conceptual design – 10 January to 20 February
* Phase II:M Hardware design – 28 February to 24 April
* Phase III: Prototype – 2 May to 29 May
The conceptual design phase requires an initial design, including an abstract, title and block diagram. Contestants receive a free HPRF design challenge kit once a valid entry has been submitted. During the hardware design phase, each contestant will develop and provide a proof of concept of a working prototype – for example, as a video or as a measurement report – as well as an accompanying bill of materials, schematics, layout file and other design-related material.
A group of finalists from EMEA, Asia Pacific and the Americas will enter the final prototype phase, during which each contestant will be given an opportunity to polish his or her design in a regional NXP HPRF design lab, with transportation and accommodation costs covered by NXP. The top three finalists will enjoy an all-expenses-paid trip to IMS2011. The grand prize will include a $3000 Apple Store voucher. Registered design challenge community members will also be eligible to rate and vote on design entries, alongside a panel of judges from NXP.
For more information visit www.nxp.com
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