High speed P-channel MOSFET driver
20 June 2001
Power Electronics / Power Management
Linear Technology's LTC1693-5 MOSFET driver/buffer is designed to drive P-channel power MOSFETs at very high speeds. The 1,5 A peak output current and low switching delay reduces switching losses of high gate capacitance P-channel MOSFETs. Rise and fall times are rated at 17,5 ns at Vcc=12 V and gate capacitance of 1 nF. For proper start-up and protection of the MOSFET, the IC contains an undervoltage lockout circuit and a thermal shutdown circuit that disables the gate drive. Applications include power supplies, high side drivers, line drivers and motor/relay control systems. It can level-shift the input logic signal up or down to the rail-to-rail Vcc drive for the external MOSFET guaranteeing full turn-on and turn-off, and offers Vcc-independent CMOS input threshold with 1,2 V of typical hysteresis.
Insight Memec, (021) 674 4124
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