Power Electronics / Power Management


RF power transistor

25 May 2011 Power Electronics / Power Management

The RF3932 is RF Micro Devices’ new 75 Watt, gallium nitride (GaN) RF unmatched power transistor (UPT). It operates over a broad frequency range (DC to 3 GHz) and delivers high peak efficiency of >65%.

Additionally, it incorporates simple, optimised matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier.

The RF3932 is packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD’s heatsink and power dissipation technologies to deliver high thermal stability and conductivity. The transistor is optimal for both driver and/or output stages, depending on overall power requirements.

For more information contact Andrew Hutton, RF Design, +27 (0)21 555 8400, [email protected], www.rfdesign.co.za



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