The RF3932 is RF Micro Devices’ new 75 Watt, gallium nitride (GaN) RF unmatched power transistor (UPT). It operates over a broad frequency range (DC to 3 GHz) and delivers high peak efficiency of >65%.
Additionally, it incorporates simple, optimised matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier.
The RF3932 is packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD’s heatsink and power dissipation technologies to deliver high thermal stability and conductivity. The transistor is optimal for both driver and/or output stages, depending on overall power requirements.
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