Bipolar power transistors

8 June 2011 Power Electronics / Power Management

STMicroelectronics has introduced the first member in a new family of high-performance bipolar power transistors. The new components offer a combination of high current capability, collector-emitter blocking voltage and low

collector-emitter saturation voltage, making them suitable for use in LED drives, motor and relay drives, and DC-DC converters.

The 3STR1630 is an NPN transistor manufactured using a new low-voltage planar technology which incorporates a double-metal process that allows the cell density to be almost doubled, without requiring the use of sophisticated photolithography equipment. In addition to increasing the current capability by about 50% for the same die size, the double-metal process enables transistors with Vceo ratings up to 100 V, higher working switching frequencies (up to 300 kHz) and a 40% reduction in Vce(sat).

The first member of the new family, the 3STR1630, has a minimum BVCEO of 30 V, offering a compromise between a 28 V blocking voltage capability and minimum Vce(sat), with an equivalent on-resistance of only 100 mW at hFE figure of 50. In addition, it can handle a continuous current as high as 6 A while being housed in a small outline SOT-23 package.

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