RF power MOSFETs

31 August 2011 Power Electronics / Power Management

Upgrades to STMicroelectronics’ production process allow its latest RF power MOSFETs to withstand peak voltages up to 200 V.

This increased ruggedness helps extend the operating lifetime of the power transistor. The advanced process also improves the MOSFETs’ gain, efficiency and high-power characteristics. The new devices feature the latest generation sealed-ceramic and ST Air Cavity (STAC) package technologies, which speed up removal of thermal energy from the die to increase reliability.

The SD4931 and SD4933 are 150 W and 300 W N-channel RF power MOSFETs for 50 V d.c. large-signal applications up to 250 MHz. The devices deliver the advantages of ST’s enhanced vertical silicon process in a sealed ceramic package featuring flanges for bolt-down mounting.

The STAC4932B and STAC4932F utilise the STAC package in bolt-down and flangeless variants, and target 100 V pulse applications at power ratings over 1000 W, such as laser driving and magnetic resonance imaging (MRI). The high thermal and electrical efficiency of the STAC package, which has a thermal base for direct soldering to a heatsink, enables the MOSFETs to produce high signal power at high frequencies.

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