Schottky rectifiers
25 January 2012
Power Electronics / Power Management
ON Semiconductor has introduced a new family of 100 V trench-based, low forward voltage Schottky rectifiers (LVFR) for applications such as switching power supplies for notebook adapters or flat panel displays, reverse battery protection circuits and high-frequency DC-DC converters.
The new NTST30100CTG, NTST20100CTG and NTSB20U100CTG family of devices utilise a trench topology that enables very low forward voltage drop and reduced leakage current. This results in low conduction losses and an improvement in circuit efficiency. This LVFR family utilises a trench MOS structure that enables an enhanced conduction zone under forward bias, resulting in significant reduction in forward voltage drop. Under reverse bias, this structure creates a pinch-off effect resulting in reduced leakage current. Unlike planar Schottky rectifiers, the LVFRs’ switching performance is strong across their entire operating junction temperature range of -40°C to +150°C.
To demonstrate the advantages of the devices, the company compared the performance of its 30 A, 100 V LVFR (NTST30100SG) with a standard 30 A, 100 V planar Schottky rectifier. Data measured in a 65 W power adapter showed a 1% efficiency improvement using LVFR versus planar Schottky.
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