Texas Instruments is expanding its MOSFET driver portfolio with three new two-output gate drivers designed to improve efficiency and reliability in high-density isolated power supplies.
The UCC27210 and UCC27211 are 120 V boot, high- and low-side, two-output MOSFET drivers providing up to 4 A output current, while handling -10 V of direct current immunity on the driver inputs. They support multiple high-frequency half-bridge and full-bridge power topologies with a fast 18 ns propagation delay. These features suit telecom, server and industrial power supply designs with 100 V surge requirements.
TI also introduced a fast 5 A, dual-channel low-side driver for secondary-side synchronous rectifier MOSFETs and IGBT power switches. The UCC27524 delivers low pulse distortion and high efficiency with a fast 12 ns propagation delay, 6 ns rise time with 1 ns output delay matching. The driver, which supports 4,5 V to 18 V operating voltages, has the flexibility to combine both outputs to drive up to 10 A applications, such as motor drive systems.
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