Vishay recently released the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500 V and 600 V N-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.
Based on a new high-voltage stripe technology, the MOSFETs’ stripe design with a smaller die size and terminations lowers the total gate charge by 50% compared to previous-generation solutions, while increasing switching speed and reducing on-resistance and input capacitance.
The 400 V, 500 V and 600 V devices feature on-resistance down to 0,17 Ω, 0,13 Ω and 0,34 Ω, respectively. This translates into low conduction and switching losses to save energy in high-power, high-performance switchmode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment and induction heating.
With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices and 45 nC for the 600 V devices, the D Series MOSFETs offer gate charge times on-resistance down to 7,65 Ω-nC, 15,6 Ω-nC and 12,3 Ω-nC, respectively.
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