Vishay has released two new 100 V n-channel TrenchFET power MOSFETs that extend the company’s ThunderFET technology to smaller package sizes.
The SiB456DK and SiA416DJ are the industry’s first 100 V n-channel devices in the compact, thermally enhanced PowerPAK SC-75 1,6 by 1,6 mm and PowerPAK SC-70 2 by 2 mm footprint areas to offer on-resistance of less than 200 mΩ and 100 mΩ, respectively.
The MOSFETs are optimised for boost converters, low-power DC-AC inverters and primary side switching in miniature DC-DC converters for telecom bricks, point-of-load applications and LED lighting in portable equipment. In addition, the MOSFETs’ on-resistance rating down to 4,5 V simplifies gate drives.
Where on-resistance is more critical than size, the SiA416DJ offers a maximum on-resistance of 83 mΩ at 10 V and 130 mΩ at 4,5 V and a low on-resistance times gate charge of 540 mΩ-nC at 10 V and 455 mΩ-nC at 4,5 V.
For applications where size is more critical, the SiB456DK features maximum on-resistance of 185 mΩ at 10 V and 310 mΩ at 4,5 V, and on-resistance times gate charge of 611 mΩ-nC at 10 V and 558 mΩ-nC at 4,5 V.
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