Freescale Semiconductor has introduced a new enhancement-mode pHEMT low noise amplifier (LNA) based on GaAs process technology and designed to optimise receiver performance for a broad array of wireless systems operating between 700 and 1400 MHz.
Typical applications include small cell and macrocell transceivers, as well as a range of applications requiring extremely low noise figures, high linearity, and high RF output power.
The noise figure of the new MML09231H is 0,36 dB at 900 MHz, making it ideal for receiver designers as it can boost product sensitivity to very low-level signals. In addition, it has an output third order intercept point (OIP3) of 37,4 dBm at 900 MHz for the high linearity required by today’s wireless systems.
The chip can tolerate a maximum input signal of +20 dBm, has an RF output peak power of +24,5 dBm (280 mW), high reverse isolation of -21 dB, small-signal gain of 17,2 dB (externally adjustable) and current consumption of only 55 mA from a single 5 V d.c. supply.
Other features include an integrated power-down pin, active bias control for maintaining constant current, unconditional stability over temperature, and low external component count.
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