International Rectifier has launched two high-performance R8 radiation hardened (Rad-hard) power MOSFETs optimised for space grade point-of-load (POL) voltage regulator applications. Utilising Trench technology, the logic level devices offer an extremely low on-state resistance (RDS(on)) of 12 mΩ and a total gate charge of 18 nC.
The IRHLNM87Y20SCS device has a BVDSS rating of 20 V and a maximum drain current (ID) rating of 17 A. The new devices are available in IR’s new SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.
The products are fully characterised for radiation performance to 300 Krads of TID and SEE with LET of 81 MeV-cm2/mg and VGS rating of 12 V. Depending on the intended design orbit and anticipated radiation environment, the MOSFETs may be well suited for applications requiring a mission life of 15 years or more.
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