1200 V SiC MOSFETs

23 October 2013 Power Electronics / Power Management

ROHM Semiconductor announced the release of two new 1200 V SiC (silicon carbide) MOSFETs, designated SCT2080KE and SCH2080KE. Both are 80 m devices, and the SCH2080KE is claimed to be the industry’s first SiC MOSFET co-packaged with a discrete anti-parallel SiC Schottky barrier diode (SBD). This discrete diode features forward voltage that is three times smaller than that of the body diode.

The combination of excellent switching performance, low on resistance and high breakdown voltage make these devices ideal replacements to silicon power MOSFETs and IGBTs in applications such as solar inverters, three-phase inverters, DC-DC converters, uninterruptible power supplies (UPS) and motor drives.

The devices’ 70 - 90 nanosecond turn-off and turn-on times permit switching frequencies in the hundreds of kilohertz range. The SCT2080KE and SCH2080KE are available in the TO-247 package, and the SCT2080KE is also available in die form.

For more information contact Arnold Perumal, Avnet Kopp, +27 (0)11 319 8600, [email protected], www.avnet.co.za

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