RF front end modules
19 February 2014
Analogue, Mixed Signal, LSI
Microchip has unveiled two new front end modules (FEM) for RF applications.
A new 5 GHz, 50 Ω matched WLAN FEM, the SST11LF04 is targeted at high data-rate mobile device applications. It features a transmitter power amplifier, a receiver low-noise amplifier with bypass and a low-loss, single-pole two-throw antenna switch for 5 GHz WLAN connectivity in one integrated, compact 2,5 x 2,5 x 0,4 mm, 16-pin QFN package.
With its small footprint, high linear output power of up to 16 dBm and 17 dBm, at 3,3 V and 5 V VCC respectively (for 1,75% dynamic EVM using MCS9-HT80 modulation and 80 MHz bandwidth) along with 18 dBm and 19 dBm linear power for 3% EVM at 3,3 V and 5 V, respectively, the chip extends the range of IEEE 802.11a WLAN systems while providing high transmit power at the maximum 11ac high-data-rate modulation.
The receiver has 12 dB gain and a greater than -6 dBm input (1 dB) compression level. In LNA bypass mode, the receiver has a 2,5 dB noise figure and a -6 dBm input compression level.
The SST11LF04’s high linear power enables 802.11a/n/ac operation and increases data rates, while its small size is ideal for space-constrained applications including mobile devices, multi-channel access points/routers and set-top boxes.
For Bluetooth as well as 802.11b/g/n and 256-QAM Wi-Fi applications, the SST12LF09 is a 2,4 GHz, 50 Ω matched RF WLAN FEM. It integrates a transmitter power amplifier, a receiver low-noise amplifier and a low-loss, single-pole three-throw antenna switch for Bluetooth connectivity into a 2,5 x 2,5 x 0,4 mm, 16-pin QFN package, making it ideal for high-data-rate wireless applications.
With its high linear output power of up to 15 and 17 dBm for 1,8% dynamic EVM at 3,3 V and 5 V, respectively; and 17 and 18,5 dBm linear power for 3% EVM at 3,3 V and 5 V, respectively, this FEM extends the range of IEEE 802.11b/g/n WLAN systems while providing high transmit power at the maximum 256-QAM data rate.
The receiver has 12 dB gain and a greater than -6 dBm input (1 dB) compression level. In the LNA bypass mode, it has a 9 dB loss and an 8 dBm input compression level.
Developers can take advantage of the SST12LF09’s small package size and extra output power at 5 V bias to reduce the board size and complexity of their designs while boosting their products’ output power.
For more information contact Shane Padayachee, Avnet Kopp, +27 (0)11 319 8600, [email protected], www.avnet.co.za
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