News


Graphene one step closer to replacing silicon

17 September 2014 News

A team of scientists, led by Professor Philip Hofmann from Aarhus University in Denmark, set out to determine specifically whether bilayer graphene could be used as a semiconductor. Their results suggest that it could replace silicon transistors in electronic circuits, and serve as the basis for chips that are faster and consume less energy than at present.

Graphene is pure carbon in the form of a very thin, almost transparent, sheet just one atom thick. It is widely hailed as a ‘miracle material’ because of its remarkable strength and efficiency in conducting heat and electricity. In its current form, graphene is not suitable for transistors, which are the foundation of all modern electronics. For a transistor to be technologically viable, it must be able to ‘switch off’ so that only a small electric current flows through its gate when in a standby state. Since graphene does not have a band gap, it cannot switch off.

STFC’s Dr Emma Springate, one of the research team, with the Artemis laser. (Credit: Monty Rakusen Photography).
STFC’s Dr Emma Springate, one of the research team, with the Artemis laser. (Credit: Monty Rakusen Photography).

The latest research used a new material – bilayer graphene – in which two layers of graphene are placed one on top of the other, leaving a small band gap to encourage the transfer of energy between layers. Using STFC’s Artemis laser, which is based at the Rutherford Appleton Laboratory in Oxfordshire, the researchers fired ultra-short pump laser pulses at the bilayer graphene sample, boosting electrons into the conduction band.

A second short, extreme ultraviolet wavelength pulse then ejected electrons from the sample. These were collected and analysed to provide a snapshot of the energies and movement of the electrons.

“We took a series of these measurements, varying the time delay between the infrared laser pump and extreme ultraviolet probe, and sequenced them into a movie,“ said STFC’s Dr Cephise Cacho, one of the research team. “To see how the fast-moving electrons behave, each frame of the movie has to be separated by just a fraction of a billionth of a second.”

Professor Hofmann added that, “What we’ve shown with this research is that our sample behaves as a semiconductor, and isn’t short-circuited by defects,” alluding to the fact that there can be imperfections in bilayer graphene as the layers sometimes become misaligned.

The research team asserts that the results of this research, in which the graphene showed no defects, suggest that further technological effort should be carried out to minimise imperfections. Once this is done, there is a chance that the switch-off performance of bilayer graphene can be boosted enough to challenge silicon-based devices.





Share this article:
Share via emailShare via LinkedInPrint this page

Further reading:

SACEEC celebrates standout industrial innovation on the KITE 2025 show floor
News
Exhibitor innovation took the spotlight at the KITE 2025 as the South African Capital Equipment Export Council announced the winners of its prestigious New Product & Innovation Awards.

Read more...
SA team for International Olympiad in Informatics
News
The Institute of Information Technology Professionals South Africa has named the team that will represent South Africa at this year’s International Olympiad in Informatics.

Read more...
Anritsu and Bluetest to support OTA measurement
News
Anritsu Company and Sweden-based Bluetest AB have jointly developed an Over-The-Air measurement solution to evaluate the performance of 5G IoT devices compliant with the RedCap specification.

Read more...
The current sentiment of the global electronics manufacturing supply chain
News
In its latest report, the Global Electronics Association provides an analysis of the current sentiment and conditions in the global electronics manufacturing supply chain as of June 2025.

Read more...
Global semiconductor sales increase in May
News
The Semiconductor Industry Association recently announced global semiconductor sales were $59,0 billion during the month of May 2025, an increase of 19,8%.

Read more...
New president for Avnet EMEA
News
Avnet has announced that Avnet Silica’s president, Gilles Beltran, will step into the role of president of Avnet EMEA.

Read more...
DARPA sets new record for wireless power beaming
News
In tests performed in New Mexico, the Persistent Optical Wireless Energy Relay program team recorded over 800 W of power delivered for about 30 seconds with a laser beam crossing 8,6 kilometres.

Read more...
Nordic Semiconductor acquires Memfault
RF Design News
With this acquisition, Nordic has launched its first complete chip-to-cloud platform for lifecycle management of connected products.

Read more...
Trina storage demonstrates high efficiency and long-term reliability
News
Independent testing confirms 95,2% DC efficiency and 98% capacity retention after one year of operation.

Read more...
From the editor's desk: AI – a double-edged sword
Technews Publishing News
As with any powerful tool, AI presents challenges, some of which, if not carefully managed, threaten to undo the potential that it can offer.

Read more...









While every effort has been made to ensure the accuracy of the information contained herein, the publisher and its agents cannot be held responsible for any errors contained, or any loss incurred as a result. Articles published do not necessarily reflect the views of the publishers. The editor reserves the right to alter or cut copy. Articles submitted are deemed to have been cleared for publication. Advertisements and company contact details are published as provided by the advertiser. Technews Publishing (Pty) Ltd cannot be held responsible for the accuracy or veracity of supplied material.




© Technews Publishing (Pty) Ltd | All Rights Reserved