Opto-Electronics


Silicon avalanche photodiodes

19 November 2014 Opto-Electronics

Hamamatsu Photonics has introduced a wide range of silicon avalanche photodiodes (APD) designed for applications requiring high sensitivity in the 800 nm wavelength band. Their design makes them particularly well suited to applications requiring low bias operation.

APDs are high-sensitivity photodiodes with low terminal capacitance, whose internal gain mechanism enables reliable measurements to be taken even at very low light levels. These APDs are supplied in compact, high-reliability TO-18 packages. Their special low bias operation means that voltages of less than 200 V can be used whilst still maintaining stable operation.

Due to their high-speed response, low power consumption and high sensitivity, these new detectors are ideal for a variety of applications including optical range finding.



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