Providing increased power density and reliability for portable electronics, the SiA466EDJ offers very high package-limited continuous drain current for a 20 V MOSFET in the 2 by 2 mm footprint, and it is the only such device with a VGS rating of ±20 V to provide integrated ESD protection.
In load switch applications, the device’s 25 A package-limited continuous drain current provides an additional safety margin for large inrush currents and fault conditions including short circuits. The MOSFET’s 2500 V integrated ESD protection prevents static damage from handling or human body contact.
To increase efficiency in high-frequency switching applications, the transistor’s low on-resistance of 9,5 mΩ (10 V), 11,1 mΩ (6 V) and 13,0 mΩ (4,5 V) reduces conduction losses, while its low 6,3 nC typical gate charge and 0,9 Ω gate resistance minimise switching losses.
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