Vishay’s VSMY14940 and VSMB14940 are 940 nm high-speed infrared emitting diodes in 3,2 x 2,51 x 1,2 mm clear SMD side-view packages. Based on GaAIAs surface emitter and multi quantum well (MQW) technologies, they combine high radiant intensity and optical power with fast switching times.
With their extremely low profiles and narrow ±9° angles of half intensity, the devices are ideal for remote control applications in space-constrained end products, including mobile devices such as smartphones and tablets. In addition, they can serve as high-intensity emitters for light barriers and smoke detectors.
The VSMY14940 offers extremely high radiant intensity to 82 mW/sr at a 70 mA drive current, fast switching times of 10 ns, and forward voltage of 1,48 V. In applications where lower intensity is needed, the VSMB14940 is built on GaAIAs MQW technology for a radiant intensity of 35 mW/sr, switching times of 15 ns, and low forward voltage of 1,33 V.
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