Vishay is now offering its 600 V E-Series power MOSFETs in the compact PowerPAK 8x8 package. The new Vishay Siliconix SiHH26N60E, SiHH21N60E, SiHH14N60E and SiHH11N60E all feature a large drain terminal for low thermal resistance and a Kelvin source connection that can increase efficiency by improving the gate drive signal.
Their new low-profile, surface-mount PowerPAK 8x8 package is RoHS-compliant, halogen-free and 100% lead-free, and it provides a space-saving alternative to conventional TO-220 and TO-263 solutions.
The construction of the PowerPAK 8x8 package allows one of the source pins to be arranged as a dedicated Kelvin source connection that separates the gate drive return path from the main current-carrying source terminals. This prevents the L x di/dt voltage drop in the high-current path from reducing the gate drive voltage that is applied to the MOSFETs. This leads to faster switching and more noise immunity in power supply designs for telecom, server, computing, lighting and industrial applications.
The devices feature low on-resistance down to 0,135 Ω at 10 V, ultra-low gate charge down to 31 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. These values translate into extremely low conduction and switching losses to save energy in power factor correction, flyback converters, and two-switch forward converters. The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100% UIS testing.
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