Vishay Intertechnology introduced the first device in its fourth generation of 600 V E-Series power MOSFETs. Providing high efficiency for telecom, industrial and enterprise power supply applications, the Vishay Siliconix n-channel SiHP065N60E slashes on-resistance by 30% compared with the previous generation while delivering 44% lower gate charge.
The SiHP065N60E features low maximum on-resistance of 0,065 Ω at 10 V and ultra-low gate charge down to 49 nC, resulting in gate charge times on-resistance of 2,8 Ω*nC which is 25% lower than the closest competing MOSFET in the same class, Vishay claims. For improved switching performance, the part provides low effective output capacitances Co(er) and Co(tr) of 93 pf and 593 pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC-DC converter topologies.
Offered in the TO-220AB package, the device is RoHS compliant, halogen-free, and designed to withstand over-voltage transients in the avalanche mode with guaranteed limits through 100% UIS testing.
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