High-speed GaN FET drivers

18 April 2018 Power Electronics / Power Management

Texas Instruments announced two new high-speed GaN FET drivers to create more efficient, higher-performing designs in speed-critical applications such as light detection and ranging (LIDAR) and 5G RF envelope tracking. The chips can deliver switching frequencies of 50 MHz while improving efficiency and enabling five times smaller solution sizes than silicon MOSFETs. With an industry-best drive speed as well as a minimum pulse width of 1 ns, the LMG1020 60 MHz low-side GaN driver enables high-accuracy lasers in industrial LIDAR applications. The LMG1210 is a 50 MHz half-bridge driver designed for GaN FETs up to 200 V. Its adjustable dead time control feature improves efficiency for DC-DC converters, motor drives, Class-D audio amplifiers and more.

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