New FETKY devices save 60% space

27 February 2002 Power Electronics / Power Management

International Rectifier has introduced two new P-channel FETKY devices that co-package a MOSFET and Schottky diode in a single SO-8 to reduce packaging cost and offer substantial space savings.

The IRF5803D2 and IRF342D2 are additions to IR's line of FETKY devices of co-packaged HEXFET power MOSFETs and Schottky diodes and are suitable for low-cost buck converter designs used in peripheral applications. The devices offer up to 60% savings when compared to a discrete solution.

In a FETKY device, the MOSFET and the diode are placed on the same heat spreader. Packaging the MOSFET and Schottky diode in a single package minimises the stray inductance and resistance due to PCB traces and packaging. Lower stray inductance reduces voltage spikes and increases reliability, while lower resistance results in higher efficiency.

Smaller voltage spikes in the circuit contribute to lower system cost, since device breakdown voltage can be lower. For example, a buck converter with a 24 V bus can be designed with the 40 V P-channel IRF5803D2 instead of 45 V P-channel MOSFET. In addition, P-channel FETKY devices do not require a charge pump or a bootstrap capacitor for high-side drive voltage in buck converters. This means that replacing N-channel control MOSFETs with FETKY devices simplifies drive circuits and reduces system cost

Avnet Kopp

011 444 2333

[email protected]

www.avnet.co.za

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