Opto-Electronics


Low capacitance photodiodes

10 April 2002 Opto-Electronics

Hamamatsu Photonics, manufacturers of high-performance optical components have developed a new series of PIN silicon and InGaAs photodiodes for high-speed operation up to 2 GHz and 3 GHz respectively. With active areas from 40 mm diameter to 10 x 10 mm, and wavelength responses from 400 nm to 2,6 mm, these photodiodes are suitable for a vast range of applications such as object counting, height warning systems, exhaust fume monitoring, data transmission, optical power monitoring and precision balances. Dedicated wide-band amplifiers such as the C4890 (Si) and C4159-02 (InGaAs), can be used in conjunction with this series. Alternatively, hybrid devices (detector plus integrated amplifier) are available to give efficient conversion of input signal to voltage output.

Hamamatsu Photonics

011 802 5505



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