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3 V and 5 V HBT power amplifiers
19 June 2002, Analogue, Mixed Signal, LSI
Hittite Microwave's highly efficient family of heterojunction bipolar transistor (HBT) MMIC power amplifiers, operating between 4,4-7,0 GHz with up to +29 dBm output power are ideal for low-cost UNII and HiperLAN applications from 5,0-6,0 GHz.
The HMC415LP3 provides 20 dB of gain and +26 dBm of saturated power at 34% PAE from a 3 V supply over 4,4 to 6,0 GHz. The HMC406MS8G provides 18 dB of gain and +29 dBm of saturated power at 38% PAE from a 5 V supply over 5,0 to 6,0 GHz. The HMC407MS8G provides 15 dB of gain and +29 dBm of saturated power at 28% PAE from a 5 V supply over 5,0-7,0 GHz. In each PA a power down control input (Vpd) can be used for RF output power/current control.
The HMC415LP3 and HMC406MS8G require minimum external components while the HMC407MS8G requires no external matching, yielding a true 50 Ohm I/O amplifier. The HMC415LP3 is packaged in leadless surface mount (3,0 x 3,0 mm) while the HMC406MS8G and HMC407MS8G are both packaged in surface mount 8-leaded MSOP packages (3,0 x 5,0 mm). All three have an exposed base for improved RF and thermal performance. |
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