Vishay's silicon NPN planar RF transistors are designed to serve as RF front-ends for analog and digital wireless comms systems up to 3 GHz, as well as TV and satellite tuners, GPS systems, and high-frequency oscillators up to 12 GHz. TSDF2005W and TSDF2020W feature low noise figures of 1,2 and 1,1 dB and very high power gain values of 21 and 20 dB, respectively, providing enhanced dynamic performance up to 3 GHz. The 5 mA TSDF2005W and 20 mA TSDF2020W offer collector-base capacitances of 0,05 and 0,15 pF, and a typical transducer gain of 17 dB. Both devices also feature low feedback capacitance. Each RF transistor has a 25 GHz transition frequency and is rated for a collector-base voltage of 10 V, a collector-emitter voltage of 3,5 V, and an emitter base voltage of 1,5 V. The TSDF2005W features a collector current of 12 mA and the TSDF2020W features a collector current of 40 mA. Rated for max junction temperature of 150°C.
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