Power MOSFETs' current capability increased by 30%

28 August 2002 Power Electronics / Power Management

International Rectifier has introduced 100 V, IRFB4710 and IRFS4710 HEXFET power MOSFETs that it says increase power density in 48 V input, half or full-bridge topologies used in the high performance DC-DC converters required for telecom and datacom equipment.

The IRFB4710 device is rated at 75 A in the TO-220 package, or 30% higher current than previous generation devices. This means that designers can shrink the size, weight and cost of power supplies by paralleling fewer devices to achieve desired current ratings.

The IRFB4710 and IRFS4710 MOSFETs have a 40% lower on-resistance, or RDS(on), than previously available devices, resulting in higher efficiency and lower operating temperature. In-circuit testing shows that four IRFB4710s run 20°C cooler at 350 W compared to industry-standard devices according to the company.

The IRFS4710 MOSFET, in a D2Pak package, is optimised for 100 to 300 W, board mounted power systems. The IRFB4710, in a TO-220 package, is designed for 3-5 kW shoe-box type power supplies used in wireless base stations.

For more information: Avnet Kopp, 011 809 6100, [email protected], www.avnet.co.za

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