Automotive power HEXFETs

12 March 2003 Power Electronics / Power Management

International Rectifier offers a new automotive-specific, trench HEXFET power MOSFET technology with a claimed 15% lower device on-resistance per unit area than industry standard and excellent avalanche capability.

The first product using this new trench technology is the Q101-qualified, 40 V IRF2804 MOSFET suitable for high power automotive applications such as 14 V integrated starter alternators, 14 V synchronous rectifier alternators, electrical power steering systems, and brush- and brush-less DC motor controls. IR says the trench MOSFET technology will be extended to the other voltages that can be found in automotive applications with 40, 55, 75 and 100 V products. The IRF2804 offers low on-resistance of 2,3 mΩ in the TO-220 package. In addition, it has low gate charge per unit area, required for high frequency operation up to 100 kHz.

These trench MOSFETs also have 10% lower on-resistance temperature coefficient than standard, which is particularly important in automotive applications where the nominal operating temperatures usually exceed 125°C and peak junction temperatures may approach 175°C.

For more information contact Avnet Kopp, 011 809 6100, [email protected], www.avnet.co.za

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