System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight and enhance reliability.
Microchip Technology announced the expansion of its silicon carbide (SiC) portfolio with the release of what it claims are the industry’s lowest on-resistance (RDS(on)) 3,3 kV MOSFETs and highest current-rated SiC Schottky barrier diodes (SBDs) available in the market, enabling designers to take advantage of ruggedness, reliability and performance. With this development, designers are equipped with the tools to develop smaller, lighter and more efficient solutions for electrified transportation, renewable energy, aerospace and industrial applications.
Many silicon-based designs have reached their limits of efficiency improvements, system cost reduction and application innovation. While high-voltage SiC provides a proven alternative to achieve these results, until now, the availability of 3,3 kV SiC power devices was limited. Microchip’s 3,3 kV MOSFETs and SBDs join the company’s broad offering of SiC solutions that include 700 V, 1200 V and 1700 V dice, discretes, modules and digital gate drivers.
Microchip’s 3,3 kV SiC power devices include MOSFETs with RDS(on) of only 25 m and SBDs with current ratings of 90 A. Both MOSFETs and SBDs are available in die or package form.
The expanded SiC portfolio is supported by a range of SiC SPICE models compatible with Microchip’s MPLAB Mindi analog simulator modules and driver board reference designs. The Intelligent Configuration Tool (ICT) enables designers to model efficient SiC gate driver settings for Microchip’s AgileSwitch family of configurable digital gate drivers.
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