This one-hour webinar will feature a detailed explanation of Infineon CoolSiC Trench Gate Oxide structure and the corresponding advantages in terms of device robustness and performance.
It will provide an overview of how Infineon Technologies is investing in wide bandgap (WBG) technology to improve the price-performance ratio of power electronics through advancements in device technology and manufacturing capabilities.
Attendees will also get an overview of the Infineon portfolio of CoolSiC devices.
Webinar topics to be covered:
• SiC trench gate topology provides higher performance without sacrificing reliability.
• Balancing the benefits and compromises when selecting SiC devices over traditional power devices.
• Unleashing new levels of efficiency and performance in real-world applications.
• Criticality of package choice for full utilisation of SiC’s benefits.
• How SiC will change the landscape for designing robust, high-power applications.
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Infineon Technologies has introduced the ISSI20BxxF Solid State Isolator (SSI) family, bringing solid-state isolation technology into high-volume applications traditionally served by photovoltaic isolators (PVIs), photovoltaic relays (PVRs), and electromechanical relays (EMRs).
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Welcome to the August issue of Dataweek. Peter Howells is still on leave, so I am back for this issue. I hope you enjoy the content and find value in it.
August is Women’s Month in South Africa, ...
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While every effort has been made to ensure the accuracy of the information contained herein, the publisher and its agents cannot be held responsible for any errors contained, or any loss incurred as a result. Articles published do not necessarily reflect the views of the publishers. The editor reserves the right to alter or cut copy. Articles submitted are deemed to have been cleared for publication. Advertisements and company contact details are published as provided by the advertiser. Technews Publishing (Pty) Ltd cannot be held responsible for the accuracy or veracity of supplied material.
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