NXP Semiconductors has released a new 48 V Airfast RF power GaN transistor. This 27 dBm RF transistor covers the frequency range of 3300 to 3800 MHz and is designed for cellular base station applications.
The transistors have high terminal impedance for optimal broadband performance. They are designed for low complexity analog or digital linearisation systems.
They have a universal broadband driver and are optimised for massive MIMO active antenna systems for 5G base stations. Supply voltage is 48 V with a peak power rating of 10 W.
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