TI advances RF capability with SiGe technology

1 March 2000 News

Texas Instruments has announced a new bipolar CMOS (BiCMOS) process incorporating silicon-germanium (SiGe) technology to enhance its radio frequency (RF) offerings for wireless telephony. The company says that the new process achieves best-in-class noise performance, linearity and battery efficiency for operation at cellular and personal communications frequencies.

Together with the cost-effectiveness of the process, these features will help advance performance and reduce power consumption for wireless devices that include the con- vergence of voice, data, video and location functionality within mobile phones; as well as cordless, short distance wireless, global positioning systems, wireless meters and other emerging systems.

According to TI, the SiGe process technology achieves peak fT, (maximum unity power gain frequency) greater than 50 GHz, by employing a proprietary SiGe bipolar device. However, optimum fT is just 25 GHz (ten times the highest operating frequency). At this level, TI's process requires less than 20 µA to achieve an fT of 25 GHz, claimed to be one-third less the power consumption than that of other processes announced to date.

The process also offers leading sensitivity of BiCMOS, with minimum noise figure below 0,5 dB at 2 GHz. For RF designers, this low noise capability means easier design implementation, helping speed wireless product development.

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