Power Integrations (PI) unveiled a new 600 V, 12 A Qspeed diode delivering what it claims is the industry’s lowest reverse recovery charge (Qrr) for a silicon diode. With a Qrr of just 14 nC at 25°C, it improves efficiency of the PFC (power factor correction) stage of on-board chargers and significantly reduces the thermal output of the PFC MOSFETs. The AEC-Q101-qualified QH12TZ600Q offers the same low-switching loss performance of a silicon carbide (SiC) device without the disadvantages of moving to more expensive technology, PI says.
The QH12TZ600Q uses merged PIN and Schottky diode technology to achieve its high performance. Its smooth reverse recovery current transition characteristics not only increase efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in on-board chargers. Devices are available in a compact 2,5 kV, isolated TO-220 package which enables direct mounting to metal heatsinking, facilitating excellent thermal performance.
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