STMicroelectronics has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a broad variety of electronic products. Target applications include consumer equipment such as chargers, external power adaptors for PCs, LED lighting drivers and power supplies inside televisions and home appliances. In higher-power applications, ST’s PowerGaN devices also benefit telecom power supplies, industrial motor drives, solar inverters and electric vehicles and chargers.
The first device in ST’s new G-HEMT transistor family is the 650 V SGT120R65AL with 120 mΩ maximum on-resistance (RDS(on), 15 A maximum current capability and a Kelvin source connection for optimum gate driving. It is available in an industry-standard PowerFLAT 5x6 HV compact surface-mount package. Typical applications are PC adaptors, USB wall chargers and wireless charging.
650 V GaN transistors in development are available now as engineering samples. These include the SGT120R65A2S with 120 mΩ RDS(on) in an advanced laminated package, the 2SPAK, which eliminates wire bonding to boost efficiency and reliability in high-power and high-frequency applications, as well as the SGT65R65AL and SGT65R65A2S both with 65 mΩ RDS(on) in PowerFLAT 5x6 HV and 2SPAK, respectively. Volume production for these products is expected in the second half of 2022.
In addition, a new cascode GaN transistor, the SGT250R65ALCS with 250 mΩ RDS(on) in a PQFN 5x6, belonging to the G-FET family, will be available for sampling later this year.
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