Two new dual-channel, galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics promise to save space and ease circuit design in high-voltage power conversion and industrial applications.
The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic isolation technology to provide 6 kV transient voltage capability in an SO-36W wide-body package.In addition, ±100 V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. The devices can deliver a powerful gate-control signal of up to 4 A, with dual output pins for extra flexibility in gate driving allowing for independent adjustment of turn-on and turn-off times. The active Miller clamp prevents gate spikes during fast commutation in half-bridge topologies.
Circuit protection features include thermal protection, a watchdog for safe operation and under-voltage lockout (UVLO) per channel to prevent start-up in a dangerous low-efficiency mode. The STGAP2SICD has a raised UVLO threshold voltage optimised for the needs of SiC MOSFETs.
Each device has an iLOCK pin for turning on both channels simultaneously in dual low-side and asymmetrical half-bridge applications. There is also interlocking to prevent shoot-through currents in conventional half-bridge circuits. Both drivers are rated for voltages up to 1200 V on the high-voltage rail and have an input-to-output propagation time of 75 ns with high PWM accuracy.
With dedicated shutdown and brake pins and a standby pin for power saving, these new gate drivers target applications such as power supplies, drives, inverters, welders and chargers. In addition, input pins compatible with TTL and CMOS logic down to 3,3 V simplify connection to a host microcontroller or DSP.
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