Power Integrations has announced the SCALE EV family of gate-driver boards for Infineon EconoDUAL modules. Suitable for original, clone and new silicon carbide (SiC) variants, the driver targets high-power automotive and traction inverters for EV, hybrid and fuel-cell vehicles including buses and trucks as well as construction, mining and agricultural equipment.
SCALE EV board-level gate drivers incorporate two reinforced gate-drive channels, associated power supplies and monitoring telemetry. The new boards are automotive-qualified and ASIL B certified, enabling implementation of ASIL C traction inverter designs. The first SCALE EV family member to be released is the 2SP0215F2Q0C, designed for the EconoDUAL 1200 V 900 A IGBT half-bridge module.
“Gate-driver design is critical to both the performance and reliability of electric vehicles”, said Peter Vaughan, director of automotive business development at Power Integrations. “By offering a product where the development, testing and qualification plus ASIL certification have already been done, we are dramatically reducing development time and cost.”
The high level of integration provided by innovative new driver ICs enables the entire driver board, including gate power, to fit onto the outline of the power module, while still providing the spacing necessary for reinforced isolation according to the IEC 60664 standard. The ASIC package provides 11,4 mm of creepage and clearance, specifically designed to meet the requirements for 800 V vehicle system voltages. Input and output lines to the system microcontroller are connected via two independent on-board connectors to meet functional safety requirements. A single 5 V supply per channel is required, with other isolated voltages being generated on the board itself.
The SCALE EV gate-driver family is rated at 1200 V for 400 V and 800 V systems and supports both SiC MOSFETs and silicon IGBTs. The design carries a 5500 m altitude rating and includes a wide range of protection provisions, including active short-circuit, active discharge of connected DC-link capacitor, overvoltage limitation via active gate control, signal transmission monitoring and on-chip temperature monitoring, and short-circuit and over-current response of less than 1 µs for SiC MOSFETs and less than 3 µs for IGBTs.
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