Mitsubishi Electric Corporation has announced that it will launch a 50 W silicon RF high-power metal-oxide semiconductor field-effect transistor (MOSFET) module for use in high-frequency power amplifiers of commercial two-way radios. The model, which offers 50 W power output in the 763 to 870 MHz band and high total efficiency of 40%, is expected to help expand radio communication range and reduce power consumption.
The 150 and 400 MHz frequency bands used for various wireless systems have become congested in many markets and therefore, the 700 MHz band, formerly used for analog TV broadcasting, has been reallocated for commercial two-way radio, increasing the demand for radios that support this band.
Conventional power amplifiers, however, experience large power loss, so there is a need for RF high-power MOSFET modules offering a built-in input/output impedance-matching circuit and guaranteed output-power performance. The new silicon RF high-power MOSFET is expected to expand the communication range and lower the power consumption of such radios.
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