Flash memory devices for high-capacity mobile storage

31 August 2026 DSP, Micros & Memory

KIOXIA has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications and high-capacity storage needs, the new devices are powered by KIOXIA’s 8th generation BiCS FLASH 3D Flash memory technology.

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this, while maintaining competitive performance.

Available in 512 GB and 1 TB capacities, the new UFS 4.1 devices combine KIOXIA’s BiCS FLASH 3D Flash memory and an integrated controller in a JEDEC-standard package. This Flash memory uses CMOS directly Bonded to Array (CBA) technology – an architectural innovation that marks a step-change in flash memory design.

For more information contact EBV Electrolink, +27 11 236 1900, johannesburg@ebv.com, www.ebv.com

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