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Electronics Buyers' Guide

Electronics Manufacturing & Production Handbook 2019


 

HBT power amplifier
19 September 2012, Analogue, Mixed Signal, LSI

RFMD’s new RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power, making it well suited for next-generation radios requiring high efficiency.

The chip’s external matching allows for use across various radio platforms. It boasts performance figures of -60 dBc ACPR at 13 dBm WCDMA, 0,25 W OP1dB and 17,6 dB gain at 2,65 GHz. It supports single-supply 5 V operation and offers Class 2 (2000 V) HBM ESD.

Applications include use as a driver amplifier for base station transceivers, a PA stage for commercial wireless infrastructure, an IF amplifier, and in 2G, 3G, LTE transceiver applications.

For more information contact Andrew Hutton, RF Design, +27 (0)21 555 8400, sales@rfdesign.co.za, www.rfdesign.co.za


Credit(s)
Supplied By: RF Design
Tel: +27 21 555 8400
Fax: 086 653 2139
Email: sales@rfdesign.co.za
www: www.rfdesign.co.za
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