New from RF Micro Devices is the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) delivering pulse power performance of 500 W in a compact flanged package at L-band.
The device is optimised for pulsed power applications requiring efficiency and compact size. It operates from 1,2 GHz to 1,4 GHz and provides 500 W of pulsed RF power from a 50 V supply. It also offers high gain of 16,5 dB and high efficiency of 55%.
The RFHA1027 is housed in a package measuring 24 by 17,4 mm, and is input and output matched to 50 Ω, efficiently minimising external components. In addition, the package leverages advanced heatsink and power dissipation technologies to deliver excellent thermal stability and conductivity.
The amplifier targets new and existing radar architectures requiring ruggedness and reliability. It complements the previous release of the RFHA1020 (280 W L-band) and RF3928 (280 W S-band) amplifiers.
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