Vishay extended its offering of TrenchFET Gen III p-channel power MOSFETs with new -40 V and -30 V devices offered in the PowerPAK 1212-8 and PowerPAK 1212-8S packages. Featuring very low on-resistance at -10 V and -4,5 V gate drives, the SiS443DN is the first -40 V p-channel Gen III device, while the SiSS27DN is the first -30 V MOSFET in the PowerPAK 1212-8S package.
The devices are optimised for 24 V, 19 V and 12 V load switches, as well as adaptor and battery switches in a wide range of applications. Their low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.
In applications requiring a higher voltage rating, the -40 V SiS443DN provides maximum on-resistance of 11,7 m (-10 V) and 16 m (-4,5 V) in the 3,3 by 3,3 mm PowerPAK 1212-8 package. When on-resistance is critical, the SiSS27DN offers extremely low values of 5,6 m (-10 V) and 9 m (-4,5 V) in the PowerPAK 1212-8S package with a low 0,75 mm profile.
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